transistors 1 publication date: march 2003 sjc00124bed 2SC2925 silicon npn epitaxial planar type for low-frequency output amplification features ? high forward current transfer ratio h fe ? low collector-emitter saturation voltage v ce(sat) absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 60 v collector-emitter voltage (base open) v ceo 50 v emitter-base voltage (collector open) v ebo 15 v collector current i c 0.7 a peak collector current i cp 1.5 a collector power dissipation p c 750 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 060v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 050v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 015v collector-base cutoff current (emitter open) i cbo v cb = 20 v, i e = 01 a collector-emitter cutoff current (base open) i ceo v ce = 20 v, i b = 010 a forward current transfer ratio * h fe v ce = 10 v, i c = 150 ma 400 1 000 2 000 ? collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.15 0.40 v collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 11 15 pf (common base, input open circuited) electrical characteristics t a = 25 c 3 c 5.0 0.2 0.7 0.1 0.45 +0.15 ?0.1 2.5 +0.6 ?0.2 0.45 +0.15 ?0.1 2.5 123 +0.6 ?0.2 4.0 0.2 5.1 0.2 12.9 0.5 2.3 0.2 0.7 0.2 unit: mm 1: emitter 2: collector 3: base eiaj: sc-43a to-92-b1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r s t h fe 400 to 800 600 to 1 200 1 000 to 2 000
2SC2925 2 sjc00124bed v be(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb 0 160 40 120 80 0 1.0 0.8 0.6 0.4 0.2 collector power dissipation p c ( w ) ambient temperature t a ( c ) 012 10 8 26 4 0 120 100 80 60 40 20 t a = 25 c 90 a 80 a 70 a 60 a 50 a 40 a 30 a 20 a 10 a i b = 100 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0 2 400 2 000 1 600 1 200 800 400 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) ? 0.001 ? 0.01 ? 0.1 ? 1 0 400 300 100 200 v cb = 10 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( a ) 1 10 100 0 40 30 10 20 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
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